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Журналы — M. Bouarroudj-Berkani, D. Othman, S. Lefebvre, S. Moumen, Z. Khatir, T. Ben Sallah, Ageing of SiC JFET transistors under repetitive current limitation conditions, Microelectronics Reliability 50 (2010) 1532–1537 — A. Oukaour, B. Tala-Ighil, B. Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, S. Lefebvre, B. Boudart, Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition, Microelectronics Reliability, Volume 51, Issue 2, February 2011, Pages 386– 391 — V. Smet, F. Forest, J.-J. Huselstein, F. Richardeau, Z. Khatir, S. Lefebvre, M. Berkani, « Ageing and Failure Modes of IGBT Modules in High Temperature Power Cycling », IEEE Transactions on Industrial Electronics, Oct. 2011, Volume 58, pp. 4931 - 4941 — T.A Nguyen, P.-Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau, Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique, Microelectronics Reliability Volume 51, Issue 6, June 2011, Pages 1127–1135 — Pietranico S., Pommier S., Lefebvre S., Berkani M., Khatir Z., Bontemps S. Cadel E., « Effect of die metallization layer ageing in the case of power semiconductor devices », European journal of electrical engineering, 2011 - Pietranico S., Lefebvre S., Pommier S., Berkani Bouarroudj M., « A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices », Microelectronics Reliability Volume 51, Issues 9–11, September–November 2011, Pages 1824– 1829 - D. Othman, M. Berkani, S. Lefebvre, A. Ibrahim, Z. Khatir, A. Bouzourene. “Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application”, Microelectronics Reliability, Volume 52, Issues 9–10, September–October 2012, Pages 1859-1864 - Kociniewski, T. Moussodji, J. ; Khatir, Z. ; Berkani, M. ; Lefebvre, S. ; Azzopardi, S. New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections Electron Device Letters, IEEE, April 2012, Volume: 33 , Issue: 4, pp 576 - 578 - T.A Nguyen, P.-Y. Joubert, S. Lefebvre and G. Chaplier, Estimation of a surface current distribution from 2D magnetic field measurements, International Journal of Applied Electromagnetics and Mechanics, Volume 39, no 1-4, 2012, p.151-156. - M. Berkani, S. Lefebvre, Z. Khatir, “Saturation current and on-resistance correlation during repetitive short-circuit conditions on SiC JFET transistors, IEEE Transaction on power electronics, Vol. 28, Issue 2, pp 621-624, 2013 - T.A. Nguyen, P.-Y. Joubert, S. Lefebvre and S. Bontemps Monitoring of ageing chips of semiconductor power modules using eddy current sensor, Electronics Letters 14th March 2013 Vol. 49 No. 6 - G. Rostaing, M. Berkania, D. Mechouche, D. Labrousse, S. Lefebvre, Z. Khatir, Ph. Dupuy, « Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications », Microelectronics Reliability, Volume 53, Issues 9–11, September– November 2013, Pages 1703–1706 - D. Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene, Robustness of 1.2 kV SiC MOSFET devices, Microelectronics Reliability, Volume 53, Issues 9–11, September– November 2013, Pages 1735-1738 - Ghania Belkacem, Stéphane Lefebvre, Pierre-Yves Joubert, Mounira Bouarroudj-Berkani, Denis Labrousse and Gilles Rostaing, « Distributed and coupled 2D electro-thermal model of power semiconductor devices », The European Physical Journal Applied Physics / Volume 66 / Issue 02 / May 2014, 20102 (9 pages) - Michele Riccio, Vincenzo d’Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy, « 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions » Microelectronics Reliability, Volume 54, Issues 9–10, September–October 2014, Pages 1845–1850 - Tien Anh Nguyen, Pierre-Yves Joubert, Stéphane Lefebvre, « Estimation of the Ageing of Metallic Layers in Power Semiconductor Modules Using the Eddy Current Method and Artificial Neural Networks », Progress In Electromagnetics Research M, Vol. 40, 129–141, 2014
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нет данных
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