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Patents:
  1. Pat. 2437718 (Russia). IPC V01J 49/00 Method of regenerating anion exchangers poisoned silicon [Text] / E.K. Spirin, L.V. Miskevich, N.Yu. Lugovtsova, E.S. Torosyan, the applicant and the patentee HPE «National Research Tomsk Polytechnic University». Claim. 30.04.2010. Publ. 27.12.2011. Bull. №36.
  2. Pat. 2437841 (Russia). IPC S02A 1/42 Method of the ion exchange process of sorption of molybdenum anion exchanger VP-1An [Text] / E.K. Spirin, L.V. Miskevich, N.Yu. Lugovtsova, E.S. Torosyan, the applicant and the patentee HPE «National Research Tomsk Polytechnic University». Claim. 30.04.2010. Publ. 27.12.2011. Bull. № 36.
  3. Pat. 2547186 (Russia). IPC E21F 5/00, A62C 3/04. A method for preventing and overcoming the spontaneous combustion of waste dumps [Text] / V.A. Portola, E.S. Torosyan. Claim. 04.03.14. Publ. 10.04.2015. Bull. № 10.
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