Branches of academic activities:

Mathematical modeling of processes of dissipation of energy pulsed electron beams in dielectrics and semiconductors. Studying the fast processes in high-resistance materials at high levels of electronic excitation, which are stimulated by emission.

Basic research results:
1. We investigated the radiative recombination processes in direct-gap semiconductors, developed and implemented in the NGO "PLATAN" way to control single crystals.
2. Research and established processes that determine the radiation-mechanical strength of dielectrics and semiconductors.
3. The processes that determine the energy yield of pulsed cathodoluminescence direct-gap semiconductors.

Publications, patents and certificates of authorship:
-Method of rejection crystals A2B6 compounds and solid solutions for devices with electronic excitation. AS N1639344 (USSR), Kl.N 01L 21 / 66.1990.
-Laser with a cathodoluminescence pumping. AS N1683464 (USSR), Kl.N 01 S 3 / 093.1991.