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N.T. Kvasov investigated the radiation-stimulated changes of structure and properties of solids. He worked out the experimental methods for determining of thermodynamically characteristics of real crystals and researched the relaxation processes in alloyed materials. This was the basis of the theory of reliability of semiconductor devices. N.T. Kvasov took part in working out the physical basis of vacuum low-temperature technology of producing the new infra-red devices.
N.T. Kvasov was a supervisor of scientific programs supported by the Government of Republic of Belarus and Fund for fundamental research.
N.T. Kvasov is an author more than 200 scientific publications including monographs and patents.
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