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29 июня 2024 / Saturday / Неделя четная
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Научные интересы
  • Рентгеновская дифракция;
  • Материаловедение;
  • Нанотехнологии;
  • Полупроводники;
  • Физика плазмы;
  • Техника и электрофизика высоких напряжений;
  • Физикаатмосферы.
Избранные труды:
  1. Lazarev S., Bauer S., Meisch T., Bauer M., Tischer I., Barchuk M., Thonke K., Holy V., Scholz F., and Baumbach T. «3D Reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11-22) GaN layers grown from sidewall of r- patterned sapphire substrate» Journal of Applied Crystallography (2013), 46, 1425-1433 (Impact factor: 3.343).
  2. Lazarev S., Bauer S., Forghani K., Barchuka M., Scholz F., Baumbach T. «High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaNheterostructure» Journal of Crystal Growth (2013), Volume 370, 51–56 (Impact factor: 1.710).
  3. Lazarev S., Barchuk M., Bauer S., Forghani K., Holý V., Scholz F. and Baumbach T. «Study of threading dislocation density reduction in AlGaNepilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system» Journal of Applied Crystallography (2013), 46, 120-127 (Impact factor: 5.152).
  4. Bauer S., Lazarev S., Molinari A., Breitenstein A., Leufke P., Kruk R., Hahn H. and Baumbach T. «The power of in situ pulsed laser deposition synchrotron characterization for the detection of domain formation during growth of Ba0.5Sr0.5TiO3 on MgO» Journal of Synchrotron Radiation (2014), 21, 386-394 (Impact factor: 2.19)
  5. S. Bauer, S. Lazarev, M. Bauer, T. Meisch, M. Caliebe, V. Holy, F. Scholz and T. Baumbach. «3D reciprocal space mapping with a 2D-detector as a low latency tool for investigating the influence of growth parameters on defects in semipolarGaN» J. Appl. Cryst. Accepted 24.03.2015, (Impact factor: 3.95)
  6. P. Schroth, M. Köhl, J.-W. Hornung, E. Dimakis, C. Somaschini, L. Geelhaar, A. Biermanns, U. Pietsch, S. Bauer, S. Lazarev, and T. Baumbach «Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction» Phys. Rev. Lett.114, 2015, 055504, (Impact factor: 7.728).
  7. E. A. Sulyanova, A. Shabalin, A. V. Zozulya, J.-M. Meijer, D. Dzhigaev, O. Gorobtsov, R. P. Kurta, S. Lazarev, U. Lorenz, A. Singer, O. Yefanov, I. Zaluzhnyy, I. Besedin, M. Sprung, A. V. Petukhov, and I. A. Vartanyants «Structural Evolution of Colloidal Crystal Films in the Process of Melting Revealed by Bragg Peak Analysis» Langmuir, Volume 31, Issue 19, 2015, 5259-5544 (Impact factor: 4.384).
  8. M. Koehl, P. Schroth, A. A. Minkevich, J.-W. Hornung, E. Dimakis, C. Somaschini, L. Geelhaar, T. Aschenbrenner, S. Lazarev, D. Grigoriev, U. Pietsch and T. Baumbach « Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction» Journal of Synchrotron Radiation, 22, 2015, 67–75 (Impact factor: 3.022).
  9. Helfrich M., Schroth P., Grigoriev D., Lazarev S., Felici R., Slobodskyy T., Baumbach T., Schaadt D. «Growth and characterization of site-selective quantum dots»Physica Status Solidi a (2012), 209, 2387–2401 (Impact factor: 1.463).
  10. Schroth P., Slobodskyy T., Grigoriev D., Minkevich A., Riotte M., Lazarev S., Fohtunge E., Hud D.Z., Schaadt D.M., Baumbach T. «Investigation of buried quantum dots using grazing incidence X-ray diffraction» Materials Science and Engineering B (2012), 177, 721–724 (Impact factor: 1.518).
  11. Scholz F., Forghani K., Klein M., Klein O., Kaiser U., Neuschl B., Tischer I., Feneberg M., Thonke K., Lazarev S., Bauer S. and Baumbach T. «Studies on Defect Reduction in AlGaN Hetero-Structures by Integrating an in-situ SiN Interlayer» Japanese Journal of AppliedPhysics(2013), 52, 08JJ07 (Impact factor: 1.058).
  12. F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, L. Kirste, S. Bauer, S. Lazarev, T. Baumbach «Growth and doping of semipolarGaN grown on patterned sapphire substrates» Journal of Crystal Growth (2014), 405, 97–101. (Impact factor: 1.693).
  13. Krause B., Miljevic B., Aschenbrenner T., Piskorska-Hommel E., Tessarek C., Barchuk M., Buth G., DonfeuTchana R., Figge S., Gutowski J., Hanschke D., Kalden J., Laurus T., Lazarev S., Magalhaes-Paniago R., Sebald K., Wolsk A., Hommel D., Falt J., Hol´y V., Baumbach T. «Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures» Journal of Alloys and Compounds(2014), 585, 572–579 (Impact factor: 2.390).
  14. Dmitry Dzhigaev, Tomaš Stankevič, Ilya Besedin, Sergey Lazarev, Anatoly Shabalin, Mikhail N. Strikhanov, Robert Feidenhans'l and Ivan A. Vartanyants «Theoretical analysis of the strain mapping in a single core-shell nanowire by x-ray Bragg ptychography» Proc. SPIE 9592, X-Ray Nanoimaging: Instruments and Methods II, 95920S (September 18, 2015), (Impact factor: 0.212)
  15. Barchuk M., Holý V., Lazarev S. and Bauer S. «Defect determination in epitaxial a-plane GaN layers» ActaCrystallographica (2011), 67, C407 (Impact factor: 2.076).
2011 © Томский политехнический университет
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