1. Gradoboev A.V., Orlova K.N. Investigation of AlGaInP heterostructures under gamma-irradiation in the field of restructuring defect structure [Electronic resource] // Physica Status Solidi (C) Current Topics in Solid State Physics : Journal. — 2015. — № 1-2. — [P. 35-38].

The given paper presents the results of studying the resistance of AlGaInP heterostructures with multiple quantum wells to 60Co gamma-quantum irradiation. It has been established that the emission power reduction has three stages.On the boundary between the first and the second stages transient processes are observed - restoration of emission power against its general reduction. The authors identify the heterostructures for which a pronounced effect of small doses is observed - restoration of emission power due to radiation-induced relaxation of mechanical stresses without formation additional structural defects. The given process precedes the first stage of emission power reduction under gamma quantum irradiation. Besides, the authors identify the heterostructures which demonstrate two additional transient processes at the first stage. The researchers also establish the relations allowing describing the emission power change at the given stages.

2. Gradoboev A.V., Orlova K.N. Deterioration of Watt and Voltage Characteristics of AlGaInP Heterostructures under Irradiation by Fast Neutrons [Electronic resource] // IOP Conference Series: Materials Science and Engineering. — 2016. — Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015). — [012026, 5 p.].

The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures (λ=625 nm).

3.А. V. Gradoboev, K. N. Orlova. Investigation of Changing Volt-Ampere Characteristics of AlGaInP Heterostructures with Multiple Quantum Wells under Ionizing Radiation [Electronic resource] / // IOP Conference Series: Materials Science and Engineering. — 2016. — Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015). — [012025, 5 p.].

Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation It is proved that LEDs′ radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.

4. A. V. Gradoboev, K. N. Orlova. Transition in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation [Electronic resource] / // IOP Conference Series: Materials Science and Engineering. — 2015. — Vol. 81 : Radiation-Thermal Effects and Processes in Inorganic Materials. — [012008, 6 p.].

Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.

5. A. V. Gradoboev, K. N. Orlova. Radiation Model of Light Emitting Diode Based on AlGaInP Heterostructures with Multiple Quantum Wells [Electronic resource] // Advanced Materials Research : Scientific Journal. — 2014. — Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013) . — [P. 237-241].

The presented radiation model allows evaluating the contribution of ohmic contacts metal-semiconductor into LED radiation resistance and, thus, can be used when developing the design and the production technology of LED with required radiation resistance.

6. K. N. Orlova, A. V. Gradoboev. Change in radiating power of the AlGaInP heterostructures under irradiation by fast neutrons [Electronic resources] // Microwave & Telecommunication Technology (CriMiCo) : 24th International Crimean Conference, Sevastopol, Crimea, 7-13 September 2014conference proceeding. — IEEE, 2014. — [P. 874-875].

It is established, that radiating power is reduced in three stages under irradiation by fast neutrons. There are areas of high, average and low electron injection in the active area of the light-emitting diodes. The final stage of the reducing process of light output power is a low electron injection.

7. K. N. Orlova, A. V. Gradoboev, I. A. Asanov.Gamma degradation of light-emitting diodes based on heterostructured AlGaInP [Electronic resources] / // The 7th International Forum on Strategic Technology (IFOST-2012), September 18-21, 2012, Tomsk : [proceedings] / National Research Tomsk Polytechnic University (TPU). — [S. l.]: IEEE, 2012. — [4 p.].

Gamma degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 590 nm region. The process of degradation light output power is shown in two stages. Light-current and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells has possible to distinguished areas of weak and strong injection of electrons into the active region of the diodes by measuring light output. The value of the light output power of LEDs irradiated 60Co gamma-rays in a passive mode decreases with increasing radiation dose, while power of degradation of light output is directly proportional to dose and fluency and is inversely proportional to the operating current at which it measured. With reduction of radiation dose differences between the region of strong injection and weak injection increases. Comparison of the research results made of different semiconductor structures suggests that the stages of degradation processes is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.

8.K. N. Orlova, I. R. Pietkova, I. F. Borovikov. Analysis of air pollution from industrial plants by lichen indication on example of small town [Electronic resource] / // IOP Conference Series: Materials Science and Engineering. — 2015. — Vol. 91: VI International Scientific Practical Conference on Innovative Technologies and Economics in Engineering, Yurga, Russia, 21-23 May 2015. — [012072, 7 p.].

According to the research the species of lichens such as Parmelia sulcata, Parmeliopsis ambigua, Phiscia stellaris, Xanthoria parietina are founded on example of small town. Values of clear air index correlated with the average content of sulphur dioxide in the air. Two zones zero projective coverage are selected. By method lichen indication on example of small city two zones lichen deserts (sulfur dioxide concentration greater than 0.3 mg/m3 ) and one area of critical pollution (sulfur dioxide concentration of 0.1 -0.3 mg/m3 ) were founded. The largest area of air pollution allegedly linked to the activities of plants. Thus metallurgical industry and heat electropower station can be called major air pollutants in small towns.

9. Y. R. Lugovaya, K. N. Orlova, S. V. Litovkin, A. G. Malchik and M. A. Gaydamak. Biotesting as a Method of Evaluating Waste Hazard in Metallic Mineral Mining [Electronic resource] // IOP Conference Series: Materials Science and Engineering. — 2016. — Vol. 127 : Urgent Problems of Modern Mechanical Engineering. — [012026, 7 p.].

As the result of identifying content of each chemical element it has been revealed that metallic mineral wastes have a considerable amount of valuable useful metals. It has been found out that determined in this way waste class can be dumped or used after recycling. It has been also indicated that mill tailings are to be stored according to contained metals without messing up dissimilar metal-containing wastes.