Kholodnaya Galina was born on 25 November of 1986 year in Kazakhstan.
In 2008 entered in TPU at Institute of high voltage and in 2010 successfully completed with theme "Features conveying pulsed electron beam in gases at elevated pressure". Kholodnaya Galina is the best-graduate student of 2010 year.
In 2010 entered in postgraduate studies of TPU and successfully completed in 2013 with theme "Plasma-chemical synthesis of nano-sized silicon dioxide from tetraethoxysilane initiated by a pulsed electron beam".
Since 2008 Kholodnaya Galina worked in the Laboratory №1 as a technician. In 2009 worked as an engineer. In 2011 transferred to the position of engineer-researcher. From 2013 is working as a junior scientist in the Laboratory №1.
