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Лефэвре Стэфан -
Ph.D

Отделение электроэнергетики и электротехники, Профессор
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22 августа 2019 / Thursday / Неделя четная
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Журналы

— M. Bouarroudj-Berkani, D. Othman, S. Lefebvre, S. Moumen, Z. Khatir, T. Ben Sallah, Ageing of SiC JFET transistors under repetitive current limitation conditions, Microelectronics Reliability 50 (2010) 1532–1537
— A. Oukaour, B. Tala-Ighil, B. Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, S. Lefebvre, B. Boudart, Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition, Microelectronics Reliability, Volume 51, Issue 2, February 2011, Pages 386– 391
— V. Smet, F. Forest, J.-J. Huselstein, F. Richardeau, Z. Khatir, S. Lefebvre, M. Berkani, « Ageing and Failure Modes of IGBT Modules in High Temperature Power Cycling », IEEE Transactions on Industrial Electronics, Oct. 2011, Volume 58, pp. 4931 - 4941 — T.A Nguyen, P.-Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau, Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique, Microelectronics Reliability Volume 51, Issue 6, June 2011, Pages 1127–1135 — Pietranico S., Pommier S., Lefebvre S., Berkani M., Khatir Z., Bontemps S. Cadel E., « Effect of die metallization layer ageing in the case of power semiconductor devices », European journal of electrical engineering, 2011 - Pietranico S., Lefebvre S., Pommier S., Berkani Bouarroudj M., « A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices », Microelectronics Reliability Volume 51, Issues 9–11, September–November 2011, Pages 1824– 1829 - D. Othman, M. Berkani, S. Lefebvre, A. Ibrahim, Z. Khatir, A. Bouzourene. “Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application”, Microelectronics Reliability, Volume 52, Issues 9–10, September–October 2012, Pages 1859-1864 - Kociniewski, T. Moussodji, J. ; Khatir, Z. ; Berkani, M. ; Lefebvre, S. ; Azzopardi, S. New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections Electron Device Letters, IEEE, April 2012, Volume: 33 , Issue: 4, pp 576 - 578 - T.A Nguyen, P.-Y. Joubert, S. Lefebvre and G. Chaplier, Estimation of a surface current distribution from 2D magnetic field measurements, International Journal of Applied Electromagnetics and Mechanics, Volume 39, no 1-4, 2012, p.151-156. - M. Berkani, S. Lefebvre, Z. Khatir, “Saturation current and on-resistance correlation during repetitive short-circuit conditions on SiC JFET transistors, IEEE Transaction on power electronics, Vol. 28, Issue 2, pp 621-624, 2013 - T.A. Nguyen, P.-Y. Joubert, S. Lefebvre and S. Bontemps Monitoring of ageing chips of semiconductor power modules using eddy current sensor, Electronics Letters 14th March 2013 Vol. 49 No. 6 - G. Rostaing, M. Berkania, D. Mechouche, D. Labrousse, S. Lefebvre, Z. Khatir, Ph. Dupuy, « Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications », Microelectronics Reliability, Volume 53, Issues 9–11, September– November 2013, Pages 1703–1706 - D. Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene, Robustness of 1.2 kV SiC MOSFET devices, Microelectronics Reliability, Volume 53, Issues 9–11, September– November 2013, Pages 1735-1738 - Ghania Belkacem, Stéphane Lefebvre, Pierre-Yves Joubert, Mounira Bouarroudj-Berkani, Denis Labrousse and Gilles Rostaing, « Distributed and coupled 2D electro-thermal model of power semiconductor devices », The European Physical Journal Applied Physics / Volume 66 / Issue 02 / May 2014, 20102 (9 pages) - Michele Riccio, Vincenzo d’Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy, « 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions » Microelectronics Reliability, Volume 54, Issues 9–10, September–October 2014, Pages 1845–1850 - Tien Anh Nguyen, Pierre-Yves Joubert, Stéphane Lefebvre, « Estimation of the Ageing of Metallic Layers in Power Semiconductor Modules Using the Eddy Current Method and Artificial Neural Networks », Progress In Electromagnetics Research M, Vol. 40, 129–141, 2014

Найдено: 2 записей

  • [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors [Electronic resource] / M. Landel [et al.] // Microelectronics Reliability. — 2016. — Vol. 64 : Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. — [P. 560–565]. — Title screen. — Доступ по договору с организацией-держателем ресурса.
    Режим доступа: http://dx.doi.org/10.1016/j.microrel.2016.07.042
  • Estimating Current Distributions in Power Semiconductor Dies Under Aging Conditions: Bond Wire Liftoff and Aluminum Reconstruction [Electronic resources] / Tien Anh Nguyen [et al.] // IEEE Transactions on Components, Packaging, and Manufacturing Technology. — 2015. — Vol. 5, iss. 6. — [P. 483 - 495]. — Title screen. — Доступ по договору с организацией-держателем ресурса.
    Режим доступа: http://dx.doi.org/10.1109/TCPMT.2015.2406576
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